PDTA123YU,115 NXP Semiconductors, PDTA123YU,115 Datasheet - Page 14

TRANS PNP W/RES 50V SOT-323

PDTA123YU,115

Manufacturer Part Number
PDTA123YU,115
Description
TRANS PNP W/RES 50V SOT-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA123YU,115

Package / Case
SC-70, SOT-323
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhm
Typical Resistor Ratio
0.222
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058792115
PDTA123YU T/R
PDTA123YU T/R
NXP Semiconductors
Fig 12. Package outline SOT323 (SC-70)
PDTA123Y_SER_4
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
Rev. 04 — 3 September 2009
1.3
e
w
PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k
B
M
0.65
B
e 1
JEITA
SC-70
scale
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
PDTA123Y series
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
© NXP B.V. 2009. All rights reserved.
X
v
ISSUE DATE
04-11-04
06-03-16
M
A
SOT323
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