PDTB113ET,215 NXP Semiconductors, PDTB113ET,215 Datasheet

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PDTB113E series PNP 500 mA resistor-equipped transistors kΩ kΩ Rev. 02 — 16 November 2009 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Type number ...

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... NXP Semiconductors 2. Pinning information Table 3. Pin SOT54 SOT54A SOT54 variant SOT23, SOT346 PDTB113E_SER_2 Product data sheet PNP 500 mA resistor-equipped transistors kΩ kΩ Pinning Description input (base) output (collector) GND (emitter) input (base) output (collector) GND (emitter) input (base) output (collector) GND (emitter) ...

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... NXP Semiconductors 3. Ordering information Table 4. Type number PDTB113EK PDTB113ES PDTB113ET [1] Also available in SOT54A and SOT54 variant packages (see 4. Marking Table 5. Type number PDTB113EK PDTB113ES PDTB113ET [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

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... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. ° amb Symbol Parameter I collector-base cut-off CBO current I collector-emitter CEO cut-off current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter ...

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... NXP Semiconductors (2) ( −1 10 −1 −10 −1 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −40 °C (3) T amb Fig 1. DC current gain as a function of collector current; typical values −10 V I(on) (1) (V) (2) (3) −1 −1 −10 −1 −10 −1 −10 = − ...

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... NXP Semiconductors 8. Package outline 3.1 2.7 3 3.0 1.7 2.5 1.3 1 1.9 Dimensions in mm Fig 5. Package outline SOT346 (SC-59A/TO-236) 4.2 3.6 3 max 4.8 4.4 5.2 14.5 5.0 12.7 Dimensions in mm Fig 7. Package outline SOT54A 2.5 2.1 Fig 9. Package outline SOT23 (TO-236AB) PDTB113E_SER_2 Product data sheet PNP 500 mA resistor-equipped transistors ...

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... NXP Semiconductors 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PDTB113EK PDTB113ES PDTB113ET [1] For further information and the availability of packing methods, see PDTB113E_SER_2 Product data sheet PNP 500 mA resistor-equipped transistors kΩ kΩ ...

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... Revision history Document ID Release date PDTB113E_SER_2 20091116 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PDTB113E_SER_1 20050427 PDTB113E_SER_2 Product data sheet PDTB113E series PNP 500 mA resistor-equipped transistors ...

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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

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... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Packing information . . . . . . . . . . . . . . . . . . . . . 7 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Legal information ...