PDTB123ET,215 NXP Semiconductors, PDTB123ET,215 Datasheet - Page 8

• Manufacturer Part Number: PDTB123ET,215
• Description: TRANS PNP W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTB123ET,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058976215; PDTB123ET T/R; PDTB123ET T/R

NXP Semiconductors
10. Revision history
Table 10.
PDTB123E_SER_2
Product data sheet
Document ID
PDTB123E_SER_2
Modifications:
PDTB123E_SER_1
Revision history
Release date
20091116
20050427
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 — 16 November 2009
Data sheet status
Product data sheet
Product data sheet
Change notice
-
-
PDTB123E series
Supersedes
PDTB123E_SER_1
-
© NXP B.V. 2009. All rights reserved.
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