PDTC123TM,315 NXP Semiconductors, PDTC123TM,315 Datasheet - Page 8

• Manufacturer Part Number: PDTC123TM,315
• Description: TRANS NPN W/RES 50V SOT-883
• Manufacturer: NXP Semiconductors

Specifications of PDTC123TM,315

• Package / Case: SC-101, SOT-883
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059931315; PDTC123TM T/R; PDTC123TM T/R

Philips Semiconductors
10. Revision history
Table 10.
PDTC123T_SER_1
Product data sheet
Document ID
PDTC123T_SER_1
Revision history
Release date
20060310
Data sheet status
Product data sheet
Rev. 01 — 10 March 2006
NPN resistor-equipped transistors; R1 = 2.2 k , R2 = open
Change notice
-
PDTC123T series
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Supersedes
-
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