DTC115TMT2L Rohm Semiconductor, DTC115TMT2L Datasheet - Page 2

• Manufacturer Part Number: DTC115TMT2L
• Description: SMALL SIGNAL SURFACE-MT SILICON
• Manufacturer: Rohm Semiconductor

Specifications of DTC115TMT2L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Other names: 4823-30680-212; Q2976642

 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
○
DTC115TM / DTC115TE / DTC115TUA / DTC115TKA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
c
www.rohm.com
Characteristics of built-in transistor.
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
DTC115TM / DTC115TE
DTC115TUA / DTC115TKA
Symbol
V
BV
BV
BV
I
I
CE(sat)
CBO
EBO
R
h
f
CBO
CEO
T
EBO
FE
1
∗
Symbol
V
V
V
Tstg
Pc
Tj
CBO
CEO
EBO
I
C
Min.
100
50
50
70
−
−
−
−
5
−55 to +150
Limits
100
150
200
150
50
50
Typ.
5
250
100
250
−
−
−
−
−
−
Max.
600
130
0.5
0.5
0.3
−
−
−
−
Unit
mW
mA
˚C
˚C
V
V
V
2/2
MHz
Unit
kΩ
μA
μA
−
V
V
V
V
I
I
I
V
V
I
I
V
C
C
E
C
C
= 50μA
CB
EB
CE
= 50μA
= 1mA
/I
= 1mA, V
B
= 4V
= 50V
= 10V, I
= 1mA/0.1mA
CE
E
=− 5mA, f = 100MHz
= 5V
Conditions
−
2009.06 - Rev.B
Data Sheet