PDTD113ET,215 NXP Semiconductors, PDTD113ET,215 Datasheet - Page 7

• Manufacturer Part Number: PDTD113ET,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PDTD113ET,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 33 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 10 V
• Minimum Operating Temperature: - 65 C
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058975215; PDTD113ET T/R; PDTD113ET T/R

NXP Semiconductors
9. Packing information
PDTD113E_SER_2
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
PDTD113EK
PDTD113ES
PDTD113ET
For further information and the availability of packing methods, see
Packing methods
SOT346
SOT54
SOT54A
SOT54 variant
SOT23
NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
Description
4 mm pitch, 8 mm tape and reel
bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
bulk, delta pinning
4 mm pitch, 8 mm tape and reel
PDTD113E series
Section
[1]
Packing quantity
3000
-
-
-
-
-215
-115
12.
© NXP B.V. 2009. All rights reserved.
5000
-
-412
-
-
-112
-
10000
-135
-
-116
-126
-
-235
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