MMUN2211LT3G ON Semiconductor, MMUN2211LT3G Datasheet - Page 11
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MMUN2211LT3G
Manufacturer Part Number
MMUN2211LT3G
Description
TRANS BRT PNP 50V SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.MMUN2211LT3G.pdf
(18 pages)
Specifications of MMUN2211LT3G
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMUN2211LT3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMUN2211LT3G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
4.5
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
I
5
C
/I
B
V
R
= 10
10
Figure 39. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 37. V
15
, COLLECTOR CURRENT (mA)
−25°C
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2231LT1G
20
20
25
0.1
CE(sat)
10
1
0
25°C
Figure 41. Input Voltage versus Output Current
30
30
versus I
T
35
A
75°C
75°C
= −25°C
10
f = 1 MHz
I
T
I
E
C
A
40
, COLLECTOR CURRENT (mA)
= 0 V
C
= 25°C
40
http://onsemi.com
45
25°C
20
50
50
11
0.001
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 40. Output Current versus Input Voltage
75°C
V
O
1
T
A
= 0.2 V
40
= −25°C
T
A
2
75°C
= −25°C
Figure 38. DC Current Gain
I
V
C
, COLLECTOR CURRENT (mA)
in
25°C
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
25°C
6
7
V
O
V
8
= 5 V
CE
= 10 V
9
100
10