MMUN2211LT3G ON Semiconductor, MMUN2211LT3G Datasheet - Page 13
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MMUN2211LT3G
Manufacturer Part Number
MMUN2211LT3G
Description
TRANS BRT PNP 50V SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.MMUN2211LT3G.pdf
(18 pages)
Specifications of MMUN2211LT3G
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMUN2211LT3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMUN2211LT3G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
0.01
0.1
3.5
2.5
1.5
0.5
1
3
2
1
0
4
0
2
T
I
C
75°C
A
/I
= −25°C
B
10
V
= 10
7
R,
Figure 49. Output Capacitance
I
C
REVERSE BIAS VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
Figure 47. V
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2233LT1G
20
12
17
30
CE(sat)
0.1
10
1
0
vs. I
V
22
40
Figure 51. Input Voltage vs. Output Current
O
25°C
= 0.2 V
C
f = 1 MHz
I
T
25°C
E
A
6
= 0 A
= 25°C
http://onsemi.com
I
27
50
C,
COLLECTOR CURRENT (mA)
13
60
32
12
1000
0.01
100
100
0.1
10
10
1
1
1
0
18
T
75°C
Figure 50. Output Current vs. Input Voltage
A
= −25°C
75°C
T
25°C
A
75°C
I
C
= −25°C
Figure 48. DC Current Gain
24
V
, COLLECTOR CURRENT (mA)
2
in,
T
INPUT VOLTAGE (VOLTS)
A
= −25°C
30
10
4
V
6
CE
V
25°C
O
= 10 V
= 5 V
100
8