BCR 129 E6327 Infineon Technologies, BCR 129 E6327 Datasheet - Page 2

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BCR 129 E6327

Manufacturer Part Number
BCR 129 E6327
Description
TRANSISTOR NPN DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 129 E6327

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
150MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
10 KOhms
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR129E6327XT
SP000012520
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR129, T
BCR129F, T
BCR129S, T
BCR129W, T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BCR129
BCR129F
BCR129S
BCR129W
For calculation of R
S
S
S
S
102°C
128°C
115°C
thJA
124°C
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
i(fwd)
i(rev)
tot
thJS
-65 ... 150
Value
Value
200
250
250
250
100
150
50
50
40
240
140
105
5
90
BCR129...
2007-07-24
Unit
V
mA
mW
°C
Unit
K/W

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