BCR 129 E6327 Infineon Technologies, BCR 129 E6327 Datasheet - Page 8

• Manufacturer Part Number: BCR 129 E6327
• Description: TRANSISTOR NPN DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 129 E6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhms
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR129E6327XT; SP000012520

Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.4
1) Lead width can be 0.6 max. in dambar area
0.25
+0.1
-0.05
1)
Package SOT23
M
Pin 1
B C
2.9
1
1.9
4
±0.1
EH
0.8
3
3.15
2
0.95
0.9
C
0.8
1.2
B
s
8
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
1.15
0.2
M
A
1
±0.1
0.1 MAX.
A
BCR129...
2007-07-24