BCR 521 E6327 Infineon Technologies, BCR 521 E6327 Datasheet - Page 3

• Manufacturer Part Number: BCR 521 E6327
• Description: TRANSISTOR NPN DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 521 E6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 100MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR521E6327XT; SP000010845

DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
V
-1
-1
3
2
1
0
2
1
0
10
10
-4
-4
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
-3
-3
FE
i (on)
= (I
10
10
= (I
-2
-2
C
)
C
)
10
10
-1
-1
I
I
C
C
A
A
10
10
0
0
3
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
0.35
0.25
0.15
0.05
10
10
= 5V (common emitter configuration)
0.5
0.4
0.3
0.2
0.1
V
V
-1
0
1
0
10
10
= (I
-2
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
), I
C
/I
10
B
i(off)
-4
= 20
10
= (I
-1
C
10
)
-3
2007-07-24
A
BCR521
A
I
I
C
C
10
10
-2
0