PDTA115TK,115 NXP Semiconductors, PDTA115TK,115 Datasheet - Page 8

• Manufacturer Part Number: PDTA115TK,115
• Description: TRANS PNP W/RES 50V SOT-346
• Manufacturer: NXP Semiconductors

Specifications of PDTA115TK,115

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2112-2; 934058832115; PDTA115TK T/R

NXP Semiconductors
Fig 5.
PDTA115T_SER_5
Product data sheet
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
Package outline SOT883 (SC-101)
VERSION
OUTLINE
SOT883
A
0.50
0.46
(1)
max.
0.03
e
A
1
b
0.20
0.12
2
1
b
IEC
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
JEDEC
e 1
E
0.35
e
REFERENCES
Rev. 05 — 2 September 2009
0.65
e
1
PNP resistor-equipped transistors; R1 = 100 k , R2 = open
L 1
0.30
0.22
SC-101
L
JEITA
3
0.30
0.22
L
A 1
D
1
b 1
A
0
PDTA115T series
PROJECTION
EUROPEAN
scale
0.5
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883
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