PDTC143TS,126 NXP Semiconductors, PDTC143TS,126 Datasheet - Page 3
PDTC143TS,126
Manufacturer Part Number
PDTC143TS,126
Description
TRANS NPN W/RES 50V TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.PDTC143TE115.pdf
(14 pages)
Specifications of PDTC143TS,126
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057572126
PDTC143TS AMO
PDTC143TS AMO
PDTC143TS AMO
PDTC143TS AMO
NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Aug 06
PDTC143TS
PDTC143TE
PDTC143TEF
PDTC143TK
PDTC143TT
PDTC143TU
PDTC143TM
TYPE NUMBER
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
handbook, halfpage
handbook, halfpage
handbook, halfpage
Top view
1
2
1
1
2
3
Bottom view
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MHC507
MAM361
3
1
1
1
R1
R1
R1
MDB270
3
2
3
2
2
3
PDTC143T series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION