BCR 133L3 E6327 Infineon Technologies, BCR 133L3 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 133L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 133L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 130MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR133L3E6327XT; SP000013564

Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR133, T
BCR133F, T
BCR133L3, T
BCR133S, T
BCR133T, T
BCR133W, T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
BCR133
BCR133F
BCR133L3
BCR133S
BCR133T
BCR133W
1 For calculation of R
S
S
S
S
S
S
102°C
128°C
109°C
115°C
124°C
thJA
135°C
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
EBO
i(on)
tot
thJS
-65 ... 150
Value
Value
200
250
250
250
250
250
100
150
50
50
10
20
240
140
165
105
90
60
Mar-07-2005
BCR133...
Unit
V
mA
mW
°C
Unit
K/W