BCR 503 B6327 Infineon Technologies

BCR 503 B6327

Manufacturer Part Number

BCR 503 B6327

Description

TRANSISTOR NPN DGTL AF SOT-23

Manufacturer

Infineon Technologies

Specifications of BCR 503 B6327

Package / Case

TO-236-3, SC-59, SOT-23-3

Transistor Type

NPN - Pre-Biased

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

2.2K

Resistor - Emitter Base (r2) (ohms)

2.2K

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 50mA, 5V

Vce Saturation (max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Frequency - Transition

100MHz

Power - Max

330mW

Mounting Type

Surface Mount

Configuration

Single

Transistor Polarity

NPN

Typical Input Resistor

2.2 KOhms

Typical Resistor Ratio

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

50 V

Peak Dc Collector Current

500 mA

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BCR503B6327XT
SP000056345

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BCR 503 B6327 RoHS