PMD9001D,115 NXP Semiconductors, PMD9001D,115 Datasheet
PMD9001D,115
Specifications of PMD9001D,115
PMD9001D T/R
PMD9001D T/R
Related parts for PMD9001D,115
PMD9001D,115 Summary of contents
Page 1
PMD9001D MOSFET driver Rev. 01 — 16 November 2006 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic ...
Page 2
... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PMD9001D 4. Marking Table 4. Type number PMD9001D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Transistor 1 (TR1) V CBO V CEO V EBO Transistor 2 (TR2) V CBO V CEO PMD9001D_1 ...
Page 3
... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol tot Diode (D1 FRM I FSM Device amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...
Page 4
... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig 1. TR2: Power derating curves 6. Thermal characteristics Table 6. Symbol Transistor 2 (TR2) R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...
Page 5
... NXP Semiconductors 3 10 duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0.33 0 0.1 0.05 0.02 0. FR4 PCB, standard footprint Fig 2. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 10 duty cycle = Z 1 th(j-a) (K/W) 0.75 0.5 0.33 ...
Page 6
... NXP Semiconductors 3 10 duty cycle = Z th(j-a) 1 (K/W) 0.75 0.5 2 0.33 10 0.2 0.1 0.05 0. Ceramic PCB standard footprint 2 3 Fig 4. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table unless otherwise specified. amb ...
Page 7
... NXP Semiconductors Table unless otherwise specified. amb Symbol Parameter V BEsat V BE Diode (D1 TR2 and Device off [1] Pulse test: t PMD9001D_1 Product data sheet Characteristics …continued Conditions base-emitter saturation mA voltage I = 100 mA base-emitter voltage forward voltage I = 200 current gain delay time rise time ...
Page 8
... NXP Semiconductors ( 150 C amb ( amb ( amb Fig 5. TR1: DC current gain as a function of collector current; typical values I(on) (V) 10 (1) ( amb ( amb ( 100 C amb Fig 7. TR1: On-state input voltage as a function of collector current; typical values PMD9001D_1 Product data sheet 006aaa015 10 (1) ...
Page 9
... NXP Semiconductors 500 h FE 400 (2) 300 (3) (4) (5) (1) 200 100 ( amb ( amb ( 100 C amb ( 125 C amb ( 150 C amb Fig 9. TR2 and D1: DC current gain as a function of collector current; typical values 1 (V) 1.0 0.8 0.6 0 amb ( amb ( 100 C amb Fig 11. TR2: Base-emitter voltage as a function of collector current ...
Page 10
... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 13. TR2: Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information Fig 15. Test circuit for switching times PMD9001D_1 Product data sheet 006aaa933 V CEsat ( (mA) C (1) I (2) I (3) I Fig 14. TR2: Collector-emitter saturation voltage as a ...
Page 11
... NXP Semiconductors 9. Package outline Fig 16. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PMD9001D [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...
Page 12
... NXP Semiconductors 11. Soldering Fig 17. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 18. Wave soldering footprint SOT457 (SC-74) PMD9001D_1 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 01 — 16 November 2006 ...
Page 13
... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date PMD9001D_1 20061116 PMD9001D_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 16 November 2006 PMD9001D MOSFET driver Supersedes - © NXP B.V. 2006. All rights reserved ...
Page 14
... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
Page 15
... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Revision history ...