BCV61A,215 NXP Semiconductors, BCV61A,215 Datasheet - Page 3

TRANS NPN 30V 100MA DUAL SOT143B

BCV61A,215

Manufacturer Part Number
BCV61A,215
Description
TRANS NPN 30V 100MA DUAL SOT143B
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BCV61A,215

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933792100215::BCV61A T/R::BCV61A T/R
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1999 Apr 08
R
Transistor TR1
I
I
h
V
V
V
C
f
F
Transistor TR2
V
h
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
EBS
NPN general purpose double transistor
th j-a
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
base-emitter forward voltage V
DC current gain
BCV61A
BCV61B
BCV61C
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
V
I
E
E
C
C
C
C
C
C
C
C
C
E
C
C
C
CB
CB
= 0; V
= 0; V
= 0; V
= 100 µA; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 10 mA; V
= 200 µA; V
= 2 mA; V
= 0; I
= 0; I
e
= 0; V
CB
CB
EB
E
E
= 30 V
= 30 V; T
= 5 V
= −250 mA
= −10 µA
CONDITIONS
CB
CE
CE
CE
B
B
CE
CE
3
B
B
CE
CE
= 0.5 mA
= 0.5 mA; note 1
= 10 V; f = 1 MHz
= 5 V
= 5 V; note 2
= 5 V
= 5 mA
= 5 mA; note 1
= 5 V; note 2
= 5 V; f = 100 MHz
= 5 V
= 5 V; R
note 1
j
CONDITIONS
= 150 °C
S
= 2 kΩ;
100
110
580
100
−400
110
200
420
MIN.
VALUE
500
90
200
700
900
660
2.5
TYP.
Product data sheet
15
5
100
800
250
600
700
770
10
−1.8
220
450
800
MAX.
BCV61
UNIT
K/W
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
V
mV
UNIT

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