... TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type Notebook PC Applications Portable Equipment Applications • Lead(Pb)-Free • Small mounting area due to small and thin package • Low drain-source ON resistance: P Channel R • High forward transfer admittance: P Channel |Y • ...
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
Electrical Characteristics MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time ...
BRT Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio Symbol Test Condition ...
Device mounted on a glass-epoxy board (b) (Note 2b) 100 10 1 0.1 0.001 0.01 Safe operating area 100 I D max (pulsed ms* 10 ms* 1 *:Single pulse Ta = 25°C Curves must be derated linearly ...