Z0103NN,135 NXP Semiconductors, Z0103NN,135 Datasheet - Page 4

• Manufacturer Part Number: Z0103NN,135
• Description: TRIAC 800V 1A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of Z0103NN,135

• Package / Case: TO-261-4, TO-261AA
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 7mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 3mA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 8.5A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 8.5 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 7 mA
• Forward Voltage Drop: 1.6 V
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2194-2; 934057055135; Z0103NN /T3

NXP Semiconductors
Z0103NN
Product data sheet
Fig 3.
Fig 4.
(W)
I
P
(A)
TSM
tot
10
2.0
1.6
1.2
0.8
0.4
0.0
8
6
4
2
0
values
Total power dissipation as a function of RMS on-state current; maximum values
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
1
0
conduction
(degrees)
angle
120
180
30
60
90
factor
form
1.57
2.8
2.2
1.9
a
4
0.2
Ω
All information provided in this document is subject to legal disclaimers.
0.4
10
Rev. 05 — 21 March 2011
0.6
10
0.8
2
number of cycles
I T
1
T j(init) = 25 °C max
a = 180 °
120 °
30 °
90 °
60 °
I
1/f
T(RMS )
Z0103NN
© NXP B.V. 2011. All rights reserved.
003aad318
003aac259
(A)
I TSM
t
10
1.2
3
4Q Triac
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