MAC212A10G ON Semiconductor, MAC212A10G Datasheet

MAC212A10G

Manufacturer Part Number

MAC212A10G

Description

THYRISTOR TRIAC 12A 800V TO220AB

Manufacturer

ON Semiconductor

Type

TRIACr

Datasheet

1.MAC212A10G.pdf (6 pages)

Specifications of MAC212A10G

Triac Type

Standard

Mounting Type

Through Hole

Configuration

Single

Current - Hold (ih) (max)

50mA

Voltage - Off State

800V

Current - Gate Trigger (igt) (max)

50mA

Current - Non Rep. Surge 50, 60hz (itsm)

100A @ 60Hz

Current - On State (it (rms)) (max)

12A

Voltage - Gate Trigger (vgt) (max)

Package / Case

TO-220-3

Current - On State (it (rms) (max)

12A

Repetitive Peak Off-state Volt

800V

Off-state Voltage

800V

Hold Current

50mA

Gate Trigger Current (max)

75mA

Gate Trigger Voltage (max)

2.5V

Package Type

TO-220AB

Peak Repeat Off Current

10uA

Peak Surge On-state Current (max)

100A

On State Voltage(max)

1.75@17AV

Mounting

Through Hole

Pin Count

3 +Tab

Operating Temp Range

-40C to 125C

Operating Temperature Classification

Automotive

Rated Repetitive Off-state Voltage Vdrm

800 V

On-state Rms Current (it Rms)

12 A

Off-state Leakage Current @ Vdrm Idrm

10 uA

Gate Trigger Voltage (vgt)

2.5 V

Gate Trigger Current (igt)

75 mA

Holding Current (ih Max)

50 mA

Forward Voltage Drop

1.75 V

Mounting Style

Through Hole

Maximum Operating Temperature

+ 125 C

Minimum Operating Temperature

- 40 C

Repetitive Peak Forward Blocking Voltage

800 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MAC212A10GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MAC212A10G

Manufacturer:

Quantity:

8 000

Current page: 1 of 6
Download datasheet (63Kb)

MAC212A8, MAC212A10

Triacs

Silicon Bidirectional Thyristors

light dimmers, motor controls, heating controls and power supplies; or

wherever full-wave silicon gate controlled solid-state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied anode voltage with positive or

negative gate triggering.

Features

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

December, 2005 − Rev. 2

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Off−State Voltage (Note 1)

Gate Open)

On-State RMS Current (T

Full Cycle Sine Wave 50 to 60 Hz

Peak Non−repetitive Surge Current (One

Full Cycle Sine Wave, 60 Hz, T

Preceded and followed by rated current

Circuit Fusing Considerations (t = 8.3 ms)

Peak Gate Power

Average Gate Power

Peak Gate Current

Operating Junction Temperature Range

Storage Temperature Range

Designed primarily for full-wave ac control applications, such as

Uniformity and Stability

Resistance, High Heat Dissipation and Durability

Blocking Voltage to 800 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter

Small, Rugged, Thermowatt Construction for Low Thermal

Gate Triggering Guaranteed in Four Modes

Pb−Free Packages are Available*

Semiconductor Components Industries, LLC, 2005

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

= −40 to +125 C, Sine Wave 50 to 60 Hz,

DRM

= +85 C, Pulse Width = 10 ms)

= +85 C, t = 8.3 ms)

= +85 C, Pulse Width = 10 ms)

and V

RRM

Rating

for all types can be applied on a continuous basis. Blocking

= 25 C unless otherwise noted)

= +85 C)

Preferred Device

MAC212A10

MAC212A8

= +25 C)

Symbol

T(RMS)

G(AV)

DRM,

TSM

RRM

stg

−40 to +125

−40 to +150

Value

0.35

600

800

100

2.0

Unit

MAC212A8D

MAC212A8DG

MAC212A10

MAC212A10G

Preferred devices are recommended choices for future use

and best overall value.

Device

MT2

ORDERING INFORMATION

600 thru 800 VOLTS

12 AMPERES RMS

http://onsemi.com

PIN ASSIGNMENT

CASE 221A−07

= 8 or 10

= Assembly Location

= Year

= Work Week

= Pb−Free Package

TO−220AB

STYLE 4

(Pb−Free)

TRIACS

Package

Publication Order Number:

Main Terminal 1

Main Terminal 2

Gate

MAC212AxG

500 Units / Box

MARKING

DIAGRAM

MAC212A8/D

MT1

AYWW

Shipping

Related parts for MAC212A10G

MAC212A10G Summary of contents

Page 1

... I 2 −40 to +125 −40 to +150 C stg Device MAC212A8D MAC212A8DG MAC212A10 MAC212A10G Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com TRIACS 12 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G MARKING DIAGRAM MAC212AxG AYWW TO−220AB CASE 221A−07 ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case r Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Secs ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...

Page 4

CONDUCTION ANGLE 75 0 2.0 4.0 6.0 8 RMS ON-STATE CURRENT (AMP) T(RMS) Figure 1. Current Derating 100 5 2 125 C ...

Page 5

MAIN TERMINAL VOLTAGE = 12 Vdc 1.6 ALL QUADRANTS 1.2 0.8 0.4 0 −60 −40 − CASE TEMPERATURE ( C) C Figure 6. Typical Gate Trigger Current 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.1 ...

Page 6

... DIMENSION Z DEFINES A ZONE WHERE ALL American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 Y14.5M, 1982. BODY AND LEAD IRREGULARITIES ARE ALLOWED. ...

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