MAC212A10G ON Semiconductor, MAC212A10G Datasheet - Page 2

• Manufacturer Part Number: MAC212A10G
• Description: THYRISTOR TRIAC 12A 800V TO220AB
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of MAC212A10G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A @ 60Hz
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 2V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 12A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 50mA
• Gate Trigger Current (max): 75mA
• Gate Trigger Voltage (max): 2.5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 100A
• On State Voltage(max): 1.75@17AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• On-state Rms Current (it Rms): 12 A
• Off-state Leakage Current @ Vdrm Idrm: 10 uA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 75 mA
• Holding Current (ih Max): 50 mA
• Forward Voltage Drop: 1.75 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MAC212A10GOS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
Thermal Resistance,
r
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Secs
Peak Repetitive Blocking Current
(V
Peak On-State Voltage
I
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R
Gate Non−Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, R
All Four Quadrants
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = "200 mA)
Turn-On Time
(V
Rise Time = 0.1 ms, Pulse Width = 2 ms)
Critical Rate of Rise of Commutation Voltage
Critical Rate of Rise of Off-State Voltage
(V
TM
D
D
D
= "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
= Rated V
= Rated V
= Rated V
(V
Gate Unenergized, T
D
DRM
DRM
= Rated V
DRM
, V
, I
, Exponential Voltage Rise, Gate Open, T
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
TM
RRM
= 17 A, I
DRM
; Gate Open)
Junction−to−Case
Junction−to−Ambient
, I
Characteristic
TM
C
GT
= +85 C)
Characteristic
L
= 17 A, Commutating di/dt = 6.1 A/ms,
= 100 W, T
= 120 mA,
L
L
= 100 W)
= 100 W)
(T
C
= 25 C unless otherwise noted; Electricals apply in both directions)
J
= +125 C)
MAC212A8, MAC212A10
http://onsemi.com
C
= +85 C)
T
J
T
= +125 C
J
2
= 25 C
Symbol
dv/dt
I
dv/dt
I
V
DRM
V
V
RRM
I
GT
I
t
GD
TM
GT
gt
H
(c)
,
Symbol
R
R
T
qJC
qJA
L
Min
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
100
1.3
0.9
0.9
1.1
1.4
6.0
1.5
5.0
12
12
20
35
−
−
−
Value
62.5
260
2.0
Max
1.75
2.0
2.0
2.0
2.0
2.5
10
50
50
50
75
50
−
−
−
−
V/ms
V/ms
Unit
Unit
mA
mA
mA
mA
C/W
ms
V
V
V
C