BTA212B-800B,118 NXP Semiconductors, BTA212B-800B,118 Datasheet - Page 2
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BTA212B-800B,118
Manufacturer Part Number
BTA212B-800B,118
Description
TRIAC 600V 12A SOT404
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212B-600B118.pdf
(6 pages)
Specifications of BTA212B-800B,118
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Triac Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
60mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
105 A
On-state Rms Current (it Rms)
12 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
18 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.3 V
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934048170118
BTA212B-800B /T3
BTA212B-800B /T3
BTA212B-800B /T3
BTA212B-800B /T3
Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
Three quadrant triacs
high commutation
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dI
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
com
D
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
2
CONDITIONS
full cycle
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; gate open circuit
V
without snubber; gate open circuit
I
dI
T
TM
D
D
D
D
D
D
DM
DM
G
= 17 A
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 12 A; V
= 67% V
= 400 V; T
DRM(max)
T
GT
GT
T
D
T
DRM(max)
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
= V
= 0.1 A; T
j
j
= 125 ˚C; I
2
= 125 ˚C
DRM(max)
; T
j
= 125 ˚C;
j
; I
= 125 ˚C
G
T(RMS)
= 0.1 A;
= 12 A;
T2+ G+
T2+ G-
T2- G-
T2+ G+
T2+ G-
T2- G-
MIN.
MIN.
MIN.
1000
0.25
2
2
2
-
-
-
-
-
-
-
-
-
-
-
-
BTA212B series B
TYP.
TYP.
TYP.
4000
1.3
0.7
0.4
0.1
60
18
21
34
31
34
30
31
24
2
-
-
Product specification
MAX.
MAX.
MAX.
1.5
2.0
1.6
1.5
0.5
50
50
50
60
90
60
60
-
-
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
A/ms
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s