BTA416Y-600B,127 NXP Semiconductors, BTA416Y-600B,127 Datasheet - Page 3

TRIAC 600V 16A TO220AB-3

BTA416Y-600B,127

Manufacturer Part Number
BTA416Y-600B,127
Description
TRIAC 600V 16A TO220AB-3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA416Y-600B,127

Package / Case
SOT78D (TO-220)
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
60mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
160A, 176A
Current - On State (it (rms)) (max)
16A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
16A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
176 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.5 V @ 20 A
Mounting Style
Through Hole
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061321127
BTA416Y-600B
BTA416Y-600B
NXP Semiconductors
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA416Y_SER_B_C_2
Product data sheet
Symbol
P
T
T
Fig 1.
Fig 2.
G(AV)
stg
j
I
TSM
(A)
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
(W)
P
tot
180
150
120
20
16
12
90
60
30
8
4
0
0
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
0
1
Limiting values
= conduction angle
conduction
(degrees)
Parameter
average gate power
storage temperature
junction temperature
angle
120
180
30
60
90
2
factor
form
1.57
2.8
2.2
1.9
a
4
…continued
4
16 A 3-quadrant triacs insulated, high commutation, high temperature
10
6
Rev. 02 — 11 March 2008
Conditions
over any 20 ms period
8
BTA416Y series B and C
10
10
12
2
14
n (number of cycles)
Min
-
-
I
40
T
T
j(init)
16
1/f
= 25 C max
120
90
60
30
= 180
© NXP B.V. 2008. All rights reserved.
I
T(RMS)
Max
1
+150
150
003aab816
003aab817
I
TSM
(A)
t
10
18
3
Unit
W
C
C
3 of 12

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