BTA416Y-800B,127 NXP Semiconductors, BTA416Y-800B,127 Datasheet - Page 2

• Manufacturer Part Number: BTA416Y-800B,127
• Description: TRIAC 800V 16A TO220AB-3
• Manufacturer: NXP Semiconductors

Specifications of BTA416Y-800B,127

• Package / Case: SOT78D (TO-220)
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 60mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 160A, 176A
• Current - On State (it (rms) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Standard
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 176 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061319127::BTA416Y-800B::BTA416Y-800B

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA416Y_SER_B_C_1
Product data sheet
Type number
BTA416Y-600B
BTA416Y-600C
BTA416Y-800B
BTA416Y-800C
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
TO-220
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220
16 A 3-quadrant triacs, insulated, high commutation, high temperature
Rev. 01 — 3 October 2007
Conditions
BTA416Y-600B; BTA416Y-600C
BTA416Y-800B; BTA416Y-800C
full sine wave; T
Figure 4
full sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 20 ms
t = 16.7 ms
/dt = 0.2 A/ s
= 20 A; I
and
Figure 2
G
5
BTA416Y series B and C
= 0.2 A;
mb
j
= 25 C prior to
and
108 C; see
3
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2007. All rights reserved.
Max
600
800
16
160
176
128
100
2
5
0.5
+150
150
Version
SOT78D
Unit
V
V
A
A
A
A
A/ s
A
W
W
C
C
2
s
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