NTMS5835NLR2G ON Semiconductor, NTMS5835NLR2G Datasheet

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... IAS 260 °C L (Note: Microdot may be in either location) Symbol Value Unit NTMS5835NLR2G R 82 qJA R 49 qJA †For information on tape and reel specifications, °C/W including part orientation and tape sizes, please R 21 qJF refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES & ...

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V 4.5 V 5 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.025 0.015 0.005 GATE−TO−SOURCE ...

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C iss 2000 1500 1000 C 500 oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 4.5 ...

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TYPICAL PERFORMANCE CURVES 100 D = 0.5 0.2 0.1 10 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

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... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...