NTMS5835NLR2G ON Semiconductor, NTMS5835NLR2G Datasheet - Page 4

• Manufacturer Part Number: NTMS5835NLR2G
• Description: MOSFET N-CH 50V 200MA 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMS5835NLR2G

• Input Capacitance (ciss) @ Vds: 2115pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
1500
1000
2500
2000
1000
3000
0.01
500
100
100
0.1
10
10
0
1
0.01
0
1
V
I
V
V
SINGLE PULSE
T
D
Figure 11. Maximum Rated Forward Biased
DS
GS
GS
C
= 10 A
= 25°C
= 20 V
= 4.5 V
= 10 V
V
V
Figure 9. Resistive Switching Time
DS
DS
t
Figure 7. Capacitance Variation
C
f
Variation vs. Gate Resistance
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
rss
C
10
0.1
R
oss
100 ms
G
10 ms
Safe Operating Area
, GATE RESISTANCE (W)
R
THERMAL LIMIT
PACKAGE LIMIT
C
DS(on)
t
iss
d(off)
1 ms
LIMIT
20
10
1
10 ms
TYPICAL PERFORMANCE CURVES
t
d(on)
30
10
T
V
J
GS
= 25°C
http://onsemi.com
= 0 V
t
r
dc
100
40
100
4
10
24
20
16
12
25
75
50
9
8
7
6
5
4
3
2
1
0
8
4
0
0
0.4
25
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 12. Maximum Avalanche Energy vs.
Drain−To−Source Voltage vs. Total Charge
J
GS
T
GS
= 25°C
J
, STARTING JUNCTION TEMPERATURE (°C)
5
= 0 V
V
SD
Figure 8. Gate−To−Source and
Starting Junction Temperature
50
Q
, SOURCE−TO−DRAIN VOLTAGE (V)
G
10
, TOTAL GATE CHARGE (nC)
Q
GD
0.6
15
75
Q
20
T
100
25
0.8
30
I
D
125
I
T
D
= 37 A
J
= 10 A
= 25°C
35
V
GS
150
40
1