Specifications of FMMT634TA
Package
3SOT-23
Configuration
Single
Peak Dc Collector Current
0.9 A
Maximum Base Emitter Saturation Voltage
1.65@5mA@1A V
Maximum Collector Emitter Saturation Voltage
0.96@5mA@1A|0.75@1mA@100mA|0.8@1mA@250mA|0.85@5mA@500mA|0.93@5mA@900mA V
Maximum Collector Base Voltage
120 V
Maximum Collector Cut-off Current
0.01 uA
Maximum Collector Emitter Voltage
100 V
Minimum Dc Current Gain
20000@100mA@5V|15000@1A@5V|5000@2A@5V
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
900mA
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
960mV @ 5mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
625mW
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage(max)
120V
Emitter-base Voltage (max)
12V
Base-emitter Saturation Voltage (max)
1.65@5mA@1A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FMMT634TR
SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A (5K minimum) - typically 600 at 5A COMPLEMENTARY TYPE ...
FMMT634 ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL Collector-Base V (BR)CBO Breakdown Voltage Collector-Emitter V (BR)CEO Breakdown Voltage Emitter-Base V (BR)EBO Breakdown Voltage Collector Cut-Off I CBO Current Emitter Cut-Off I EBO Current Collector Emitter I CES Cut-Off Current Collector-Emitter V ...
TYPICAL CHARACTERISTICS 1.6 +25°C IC/IB=100 1.2 IC/IB=500 IC/IB=1000 IC/IB=5000 0.8 0.4 0 10mA 100mA 1mA I -Collector Current CE(sat) C 120K VCE=5V 90K +100°C 60K +25°C 30K -55°C 0 1mA 10mA 100mA IC-Collector Current hFE V ...