FMMT634TA Diodes Zetex, FMMT634TA Datasheet - Page 2

• Manufacturer Part Number: FMMT634TA
• Description: Trans Darlington NPN 100V 0.9A 3-Pin SOT-23 T/R
• Manufacturer: Diodes Zetex
• Type: NPNr

Specifications of FMMT634TA

• Package: 3SOT-23
• Configuration: Single
• Peak Dc Collector Current: 0.9 A
• Maximum Base Emitter Saturation Voltage: 1.65@5mA@1A V
• Maximum Collector Emitter Saturation Voltage: 0.96@5mA@1A|0.75@1mA@100mA|0.8@1mA@250mA|0.85@5mA@500mA|0.93@5mA@900mA V
• Maximum Collector Base Voltage: 120 V
• Maximum Collector Cut-off Current: 0.01 uA
• Maximum Collector Emitter Voltage: 100 V
• Minimum Dc Current Gain: 20000@100mA@5V|15000@1A@5V|5000@2A@5V
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 900mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 960mV @ 5mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage(max): 120V
• Emitter-base Voltage (max): 12V
• Base-emitter Saturation Voltage (max): 1.65@5mA@1A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FMMT634TR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
† T
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
j
=150°C
FMMT634
V
SYMBOL
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
MIN.
120
100
12
20K
15K
5K
amb
TYP.
170
115
16
0.67
0.72
0.75
0.82
0.68
0.85
1.5
1.33
50K
60K
40K
14K
600
24K
140
9
290
2.4
= 25°C unless otherwise stated).
MAX. UNIT
10
10
100
1.65
1.5
20
0.75
0.80
0.85
0.93
0.96
—
V
V
V
nA
nA
nA
V
V
V
V
V
V
V
MHz
pF
ns
s
2%.
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B
CB
EB
CES
CB
CC
=100 A
=10mA*
=100 A
=100mA, I
=250mA, I
=500mA, I
=900mA, I
=900mA, I
=1A, I
=1A, I
=10mA, V
=100mA, V
=1A, V
=2A, V
=5A, V
=1A, V
=50mA, V
=500mA
= 1mA
=1A, V
=80V
=7V
=10V, f=1MHz
=20V
=80V
B
B
CE
CE
CE
CE
CE
=5mA *
=5mA *
=5V *
=5V *
=5V *
=2V *
=5V*
CE
CE
B
B
B
B
B
CE
=1mA *
=1mA *
=5mA *
=5mA *
=5mA *†
=5V *
=10V
=5V *