BFP740FE6327XT Infineon Technologies, BFP740FE6327XT Datasheet

no-image

BFP740FE6327XT

Manufacturer Part Number
BFP740FE6327XT
Description
Trans GP BJT NPN 4V 0.03A 4-Pin TSFP T/R
Manufacturer
Infineon Technologies
Type
NPNr
Datasheet

Specifications of BFP740FE6327XT

Package
4TSFP
Supplier Package
TSFP
Pin Count
4
Minimum Dc Current Gain
160@25mA@3V
Maximum Operating Frequency
42000(Typ) MHz
Maximum Dc Collector Current
0.03 A
Maximum Collector Base Voltage
13 V
Maximum Collector Emitter Voltage
4 V
Maximum Emitter Base Voltage
1.2 V
NPN Silicon Germanium RF Transistor
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP740F
1
Pb-containing package may be available upon special request
High gain ultra low noise RF transistor
Provides outstanding performance for
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.5 dB at 1.8 GHz
High maximum stable gain
Gold metallization for extra high reliability
150 GHz f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
a wide range of wireless applications
up to 10 GHz and more
Outstanding noise figure F = 0.75 dB at 6 GHz
G
ms
= 27.5 dB at 1.8 GHz
T
-Silicon Germanium technology
Marking
R7s
1=B
1)
2=E
Pin Configuration
3=C
1
4=E
-
Direction of Unreeling
-
4
Top View
3
4
1
XYs
Package
TSFP-4
3
2
2007-04-20
1
BFP740F
2

Related parts for BFP740FE6327XT

BFP740FE6327XT Summary of contents

Page 1

NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications GHz and more Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.5 ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage T > 0° 0°C A Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation T 90°C S Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 2) Junction ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

... Package Equivalent Circuit: CBS RBS CBCC BFP740F_Chip B B LBB LBC CBEC LEC CBEI CBEO For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com 1.1 mA IKF = 512 IKR = ...

Page 5

Total power dissipation P tot 180 mW 140 120 100 105 120 ° Permissible Pulse Load totmax totDC ...

Page 6

Third order Intercept Point IP (Output parameter 900 MHz 1.00V ...

Page 7

Power gain parameter in GHz 0.5 1 1 [V] CE ...

Page 8

Source impedance for min. noise figure vs. frequency 1.5 0.5 0.4 0 8mA c 0.2 4GHz 3GHz 5GHz 0.1 2.4GHz 1.8GHz 6GHz 0.2 0.4 ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Related keywords