BFS17WT/R NXP Semiconductors, BFS17WT/R Datasheet - Page 3

• Manufacturer Part Number: BFS17WT/R
• Description: Trans GP BJT NPN 15V 0.05A 3-Pin SC-70 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFS17WT/R

• Package: 3SC-70
• Supplier Package: SC-70
• Pin Count: 3
• Minimum Dc Current Gain: 25@2mA@1V
• Maximum Operating Frequency: 1600(Typ) MHz
• Maximum Dc Collector Current: 0.05 A
• Maximum Collector Base Voltage: 25 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2.5 V

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1995 Sep 04
R
I
h
f
C
C
C
F
handbook, halfpage
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C (unless otherwise specified).
NPN 1 GHz wideband transistor
th j-s
c
e
re
(mW)
P tot
s
400
300
200
100
is the temperature at the soldering point of the collector pin.
0
0
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
noise figure
Fig.2 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MLB587
( C)
o
I
I
I
f = 500 MHz
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 MHz; T
I
f = 500 MHz; 
E
C
C
E
C
B
C
200
= 0; V
= 2 mA; V
= 25 mA; V
= i
= i
= i
= 2 mA; V
e
b
c
= 0; V
= 0; V
= 0; V
CONDITIONS
CB
= 10 V
3
CB
EB
CE
amb
CE
CE
CE
handbook, halfpage
S
= 0.5 V;
= 1 V
= 10 V;
= 5 V;
= 5 V;
= 25 C
= 5 V;
= 
V
CE
up to T
h FE
Fig.3
opt
= 1 V.
60
40
20
0
10
−1
s
DC current gain as a function of collector
current; typical values.
= 118 C; note 1
CONDITIONS

25





MIN.
1

90
1.6
0.8
2
0.75
4.5
TYP.
10
Product specification
10


1.5



VALUE
I C (mA)
MAX.
190
BFS17W
MBG237
10
nA
GHz
pF
pF
pF
dB
2
UNIT
UNIT
K/W