PIC18F45K20-E/P Microchip Technology, PIC18F45K20-E/P Datasheet - Page 38
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PIC18F45K20-E/P
Manufacturer Part Number
PIC18F45K20-E/P
Description
32KB, Flash, 1536bytes-RAM, 36I/O, 8-bit Family,nanowatt XLP 40 PDIP .600in TUBE
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets
1.PIC18F25K20T-ISS.pdf
(42 pages)
2.PIC18F25K20T-ISS.pdf
(12 pages)
3.PIC18F25K20T-ISS.pdf
(14 pages)
4.PIC18F25K20T-ISS.pdf
(456 pages)
5.PIC18F45K20-IPT.pdf
(78 pages)
Specifications of PIC18F45K20-E/P
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
35
Program Memory Size
32KB (16K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 14x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
40-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM240313 - BOARD DEMO 8BIT XLPAC164112 - VOLTAGE LIMITER MPLAB ICD2 VPPDM164124 - KIT STARTER FOR PIC18F4XK20
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F45K20-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
PIC18F2XK20/4XK20
6.0
DS41297F-page 38
Standard Operating Conditions
Operating Temperature: 25°C is recommended
Param
D110
D110A V
D111
D112
D113
D031
D041
D080
D090
D012
P1
P2
P2A
P2B
P3
P4
P5
P5A
P6
P9
P9A
P10
P11
P11A
Note 1:
No.
V
V
I
I
V
V
V
V
C
T
T
T
T
T
T
T
T
T
T
T
T
T
T
PP
DDP
AC/DC CHARACTERISTICS TIMING REQUIREMENTS FOR PROGRAM/
VERIFY TEST MODE
Sym.
R
PGC
PGCL
PGCH
SET
HLD
DLY
DLY
DLY
DLY
DLY
DLY
DLY
DRWT
IHH
IHL
DD
IL
IH
OL
OH
IO
Do not allow excess time when transitioning MCLR between V
executions to occur. The maximum transition time is:
1 T
+ 1.5 μs (for EC mode only) where T
T
sheet for the particular device.
OSC
1
1
1
2
5
5
6
7
1
A
A
CY
High-Voltage Programming Voltage on
MCLR/V
Low-Voltage Programming Voltage on
MCLR/V
Supply Voltage During Programming
Programming Current on MCLR/V
Supply Current During Programming
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Capacitive Loading on I/O pin (PGD)
MCLR/V
Program/Verify mode
Serial Clock (PGC) Period
Serial Clock (PGC) Low Time
Serial Clock (PGC) High Time
Input Data Setup Time to Serial Clock ↓
Input Data Hold Time from PGC ↓
Delay between 4-bit Command and Command
Operand
Delay between 4-bit Command Operand and next
4-bit Command
Delay between Last PGC ↓ of Command Byte to
First PGC ↑ of Read of Data Word
PGC High Time (minimum programming time)
PGC High Time
PGC Low Time after Programming
(high-voltage discharge time)
Delay to allow Self-Timed Data Write or
Bulk Erase to occur
Data Write Polling Time
is the oscillator period. For specific values, refer to the Electrical Characteristics section of the device data
+ T
PWRT
PP
PP
PP
(if enabled) + 1024 T
/RE3
/RE3
/RE3 Rise Time to enter
Characteristic
Advance Information
OSC
CY
PP
is the instruction cycle time, T
(for LP, HS, HS/PLL and XT modes only) + 2 ms (for HS/PLL mode only)
/RE3
V
V
0.8 V
DD
DD
Min.
1.80
1.80
V
100
400
400
200
2.7
40
40
15
15
40
40
20
—
—
—
—
—
1
1
5
5
4
SS
+ 4.5
– 0.7
IL
DD
and V
0.2 V
PWRT
IHH
Max.
3.60
3.60
3.60
V
300
0.6
1.0
10
—
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9
DD
; this can cause spurious program
DD
is the Power-up Timer period and
Units
© 2009 Microchip Technology Inc.
mA
ms
ms
ms
ms
μA
pF
μs
ns
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
V
V
V
V
V
V
V
V
Row Erase/Write
Bulk Erase operations
I
I
To meet AC specifications
(Note 1)
V
V
V
V
V
V
Externally Timed
Configuration Word
programming time
OL
OH
DD
DD
DD
DD
DD
DD
= X.X mA @ 2.7V
= -Y.Y mA @ 2.7V
= 3.6V
= 1.8V
= 3.6V
= 1.8V
= 3.6V
= 1.8V
Conditions