PIC18F87K90-E/PT Microchip Technology, PIC18F87K90-E/PT Datasheet - Page 521
PIC18F87K90-E/PT
Manufacturer Part Number
PIC18F87K90-E/PT
Description
128kB Flash, 4kB RAM, 1kB EE, 16MIPS, NanoWatt XLP, LCD, 5V 80 TQFP 12x12x1mm TR
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheet
1.PIC18F66K90-IMR.pdf
(570 pages)
Specifications of PIC18F87K90-E/PT
Core Processor
PIC
Core Size
8-Bit
Speed
64MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LCD, POR, PWM, WDT
Number Of I /o
69
Program Memory Size
128KB (64K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 24x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
80-TQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F87K90-E/PT
Manufacturer:
MICROCHIP
Quantity:
12 000
Company:
Part Number:
PIC18F87K90-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
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TABLE 31-1:
2009-2011 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132B V
D133A T
D134
D135
D140
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
T
I
T
DDP
DDP
Sym
RETD
REF
IW
RETD
WE
PP
D
DRW
DEW
P
PR
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to
endurance.
The MPLAB
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write Operations
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
Section 8.8 “Using the Data EEPROM”
for Read/Write
for Read
®
ICD 2 does not support variable V
Characteristic
PP
/RE5 pin
(2)
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
V
DD
100K
10K
Min
1.8
1.8
1M
1.8
1.8
1.8
40
40
—
—
—
—
—
+ 1.5
PP
PIC18F87K90 FAMILY
for a more detailed discussion on data EEPROM
output. Circuitry to limit the ICD 2 V
Typ†
10M
—
—
—
—
—
—
—
—
—
—
—
—
—
4
2
Max
5.5
3.6
5.5
3.6
5.5
10
—
—
—
—
10
—
—
—
-40°C T
9
1
Units
Year Provided no other
Year Provided no other
E/W -40 C to +125 C
E/W -40°C to +125°C
E/W -40 C to +125 C
mA
mA
ms
ms
V
V
V
V
V
V
A
A
+125°C for extended
+85°C for industrial
(Note 3)
(Note 2)
Using EECON to read/write
ENVREG tied to V
Using EECON to read/write
ENVREG tied to V
specifications are violated
ENVREG tied to V
ENVREG tied to V
ENVREG tied to V
specifications are violated
For each physical address
Conditions
PP
DS39957D-page 521
voltage must be
DD
SS
DD
SS
DD
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