S29GL01GP11TFCR10 Spansion Inc., S29GL01GP11TFCR10 Datasheet - Page 47

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S29GL01GP11TFCR10

Manufacturer Part Number
S29GL01GP11TFCR10
Description
IC 1GIG 3.0V FLASH MEMORY
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29GL01GP11TFCR10

Cell Type
NOR
Density
1Gb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
27/26Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
128M/64M
Supply Current
110mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S29GL01GP11TFCR10
Manufacturer:
IDT
Quantity:
101
November 17, 2010 S29GL-P_00_A13
Device returns to reading array.
PASS. Write Lock Register
Address XXXh, Data 90h
Address XXXh, Data 00h
Exit Command:
Yes
Enter Lock Register Command:
Program Lock Register Data
Address XXXh, Data A0h
Address XXXh*, Data PD
Perform Polling Algorithm
Address 555h, Data AAh
Address 2AAh, Data 55h
Address 555h, Data 40h
(see Write Operation Status
Write Unlock Cycles:
Figure 8.3 Lock Register Program Algorithm
DQ5 = 1?
flowchart)
D a t a
Write
Done?
No
Yes
S29GL-P MirrorBit
S h e e t
FAIL. Write rest command
to return to reading array.
No
®
Flash Family
XXXh = Address don’t care
Program Data (PD): See text for Lock Register definitions
Caution:
Unlock Cycle 1
Unlock Cycle 2
Error condition (Exceeded Timing Limits)
Lock register can only be progammed once.
47

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