S29GL01GP11TFCR10 Spansion Inc., S29GL01GP11TFCR10 Datasheet - Page 66

• Manufacturer Part Number: S29GL01GP11TFCR10
• Description: IC 1GIG 3.0V FLASH MEMORY
• Manufacturer: Spansion Inc.

Specifications of S29GL01GP11TFCR10

• Cell Type: NOR
• Density: 1Gb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 27/26Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 128M/64M
• Supply Current: 110mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Compliant

Notes
1.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
66
Figure 11.15
Addresses
RESET#
RY/BY#
indicates last two bus cycles of a program or erase operation.
WE#
Data
OE#
CE#
t
RH
555 for program
2AA for erase
Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
t
t
t
DS
CP
PA for program
SA for sector erase
555 for chip erase
CPH
t
AS
t
S29GL-P MirrorBit
DH
OUT
is the data written to the device.
t
AH
PD for program
30 for sector erase
10 for chip erase
t
BUSY
D a t a
®
t
Flash Family
WHWH1 or 2
Data# Polling
S h e e t
DQ7#
PA
S29GL-P_00_A13 November 17, 2010
D
OUT