SST25VF080B-80-4C-QAE-T Microchip Technology, SST25VF080B-80-4C-QAE-T Datasheet - Page 2

• Manufacturer Part Number: SST25VF080B-80-4C-QAE-T
• Description: 2.7V To 3.6V 8Mbit SPI Serial Flash 8 TDFN-S 6x5x0.8mm T/R
• Manufacturer: Microchip Technology

Specifications of SST25VF080B-80-4C-QAE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Product Description
SST’s 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low
pin-count package which occupies less board space and ultimately lowers total system costs. The
SST25VF080B devices are enhanced with improved operating frequency and lower power consump-
tion. SST25VF080B SPI serial flash memories are manufactured with SST’s proprietary, high-perfor-
mance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with alternate approaches.
The SST25VF080B devices significantly improve performance and reliability, while lowering power
consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for
SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy consumed during any Erase or Program operation
is less than alternative flash memory technologies.
The SST25VF080B device is offered in 8-lead SOIC (200 mils), 8-lead SOIC (150 mils), 8-contact
WSON (6mm x 5mm), and 8-lead PDIP (300 mils) packages. See Figure 2 for pin assignments.
2
8 Mbit SPI Serial Flash
SST25VF080B
S71296-05-000
Data Sheet
02/11