SST25VF080B-80-4I-S2AE-T Microchip Technology, SST25VF080B-80-4I-S2AE-T Datasheet - Page 12

• Manufacturer Part Number: SST25VF080B-80-4I-S2AE-T
• Description: 2.7V To 3.6V 8Mbit SPI Serial Flash 8 SOIJ .208in T/R
• Manufacturer: Microchip Technology

Specifications of SST25VF080B-80-4I-S2AE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (0.200", 5.30mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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©2011 Silicon Storage Technology, Inc.
Byte-Program
The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected
byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction
applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain
active low for the duration of the Byte-Program instruction. The Byte-Program instruction is initiated by
executing an 8-bit command, 02H, followed by address bits [A
input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is exe-
cuted. The user may poll the Busy bit in the software status register or wait T
the internal self-timed Byte-Program operation. See Figure 7 for the Byte-Program sequence.
Figure 7: Byte-Program Sequence
SCK
CE#
SO
SI
MODE 3
MODE 0
MSB
0 1 2 3 4 5 6 7 8
02
12
HIGH IMPEDANCE
MSB
ADD.
15 16
8 Mbit SPI Serial Flash
ADD.
23
-A
23 24
0
]. Following the address, the data is
ADD.
31 32
MSB
1296 ByteProg.0
D
IN
SST25VF080B
BP
LSB
39
for the completion of
S71296-05-000
Data Sheet
02/11