SST39VF1682-70-4C-EKE Microchip Technology, SST39VF1682-70-4C-EKE Datasheet - Page 11
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SST39VF1682-70-4C-EKE
Manufacturer Part Number
SST39VF1682-70-4C-EKE
Description
2.7V To 3.6V 16Mbit Multi-Purpose Flash 48 TSOP 12x20 Mm TRAY
Manufacturer
Microchip Technology
Datasheets
1.SST39VF010-70-4C-NHE.pdf
(2 pages)
2.SST39VF010-70-4C-NHE.pdf
(2 pages)
3.SST39VF1681-70-4I-EKE.pdf
(29 pages)
Specifications of SST39VF1682-70-4C-EKE
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Data Bus Width
8 bit
Architecture
Sectored
Interface Type
CFI
Access Time
70 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
18 mA
Mounting Style
SMD/SMT
Organization
2 MB x 8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST39VF1682-70-4C-EKE
Manufacturer:
ST
Quantity:
15 600
Part Number:
SST39VF1682-70-4C-EKE
Manufacturer:
SST
Quantity:
20 000
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
TABLE 10: DC O
TABLE 11: R
TABLE 12: C
TABLE 13: R
©2003 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
I
V
V
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB
ALP
LI
LIW
LO
LTH
PU-READ
PU-WRITE
DR
IL
ILC
IH
IHC
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
2. See Figure 17
3. The I
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
1
1
1
1
(room temperature), and V
higher minimum specification.
1,2
END
1
DD
1
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
Parameter
Power Supply Current
Read
Program and Erase
Standby V
Auto Low Power
Input Leakage Current
Input Leakage Current
on WP# pin and RST#
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
current listed is typically less than 2mA/MHz, with OE# at V
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
ELIABILITY
3
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
PERATING
DD
Current
C
HARACTERISTICS
DD
C
S
= 3V. Not 100% tested.
YSTEM
HARACTERISTICS
P
OWER
V
V
0.7V
-
DD
DD
UP
Min
-0.3
-0.2
V
DD
T
DD
IMINGS
Minimum Specification
= 2.7-3.6V
Limits
11
100 + I
Max
0.8
0.3
0.2
10,000
18
35
20
20
10
10
1
100
IH.
Typical V
1
DD
Units
mA
mA
µA
µA
µA
µA
µA
DD
V
V
V
V
V
V
is 3V.
Test Conditions
Address input=V
V
CE#=V
CE#=WE#=V
CE#=V
CE#=V
All inputs=V
V
WP#=GND to V
V
V
V
V
V
I
I
OL
OH
Cycles
DD
IN
OUT
DD
DD
DD
DD
Test Condition
Units
Years
=100 µA, V
=GND to V
=-100 µA, V
mA
=V
=V
=V
=V
=V
Minimum
=GND to V
V
V
I/O
DD
DD
DD
DD
DD
IN
IL
IHC
ILC
100
100
, OE#=WE#=V
= 0V
= 0V
Max
, V
Min
Max
Max
Max
, V
SS
DD
Preliminary Specifications
DD
IL
DD
DD
JEDEC Standard A117
JEDEC Standard A103
, OE#=V
or V
=V
DD
=V
DD
DD
JEDEC Standard 78
, V
=V
ILT
=V
DD
DD
, V
/V
DD,
or RST#=GND to V
DD
DD
Test Method
DD
Max
DD
IHT
Max
=V
WE#=V
Min
S71243-03-000
IH
IH
=V
Min
2
DD
, at f=5 MHz,
, all I/Os open
Maximum
DD
Max
12 pF
Units
6 pF
Max
µs
µs
IHC
T10.8 1243
T11.0 1243
T12.0 1243
T13.2 1243
11/03
DD