SST39VF1682-70-4C-EKE Microchip Technology, SST39VF1682-70-4C-EKE Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
SST39VF1682-70-4C-EKE
Manufacturer Part Number
SST39VF1682-70-4C-EKE
Description
2.7V To 3.6V 16Mbit Multi-Purpose Flash 48 TSOP 12x20 Mm TRAY
Manufacturer
Microchip Technology
Datasheets
1.SST39VF010-70-4C-NHE.pdf
(2 pages)
2.SST39VF010-70-4C-NHE.pdf
(2 pages)
3.SST39VF1681-70-4I-EKE.pdf
(29 pages)
Specifications of SST39VF1682-70-4C-EKE
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Data Bus Width
8 bit
Architecture
Sectored
Interface Type
CFI
Access Time
70 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
18 mA
Mounting Style
SMD/SMT
Organization
2 MB x 8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST39VF1682-70-4C-EKE
Manufacturer:
ST
Quantity:
15 600
Part Number:
SST39VF1682-70-4C-EKE
Manufacturer:
SST
Quantity:
20 000
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
TABLE 7: CFI Q
TABLE 8: S
TABLE 9: D
©2003 Silicon Storage Technology, Inc.
Address
Address
Address
1. Refer to CFI publication 100 for more details.
1CH
1DH
2CH
2DH
1AH
1BH
1EH
1FH
2AH
2BH
2EH
2FH
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
20H
21H
22H
23H
24H
25H
26H
27H
28H
29H
30H
31H
32H
33H
34H
YSTEM
EVICE
Data
Data
Data
FFH
51H
52H
59H
01H
07H
00H
00H
00H
00H
00H
00H
27H
36H
00H
00H
03H
00H
04H
05H
01H
00H
01H
01H
15H
00H
00H
00H
00H
02H
01H
10H
00H
1FH
00H
00H
01H
UERY
G
I
NTERFACE
EOMETRY
Data
Query Unique ASCII string “QRY”
Primary OEM command set
Address for Primary Extended Table
Alternate OEM command set (00H = none exists)
Address for Alternate OEM extended Table (00H = none exits)
Data
V
DQ
V
DQ
V
V
Typical time out for Byte-Program 2
Typical time out for min. size buffer program 2
Typical time out for individual Sector/Block-Erase 2
Typical time out for Chip-Erase 2
Maximum time out for Byte-Program 2
Maximum time out for buffer program 2
Maximum time out for individual Sector/Block-Erase 2
Maximum time out for Chip-Erase 2
Data
Device size = 2
Flash Device Interface description; 00H = x8-only asynchronous interface
Maximum number of byte in multi-byte write = 2
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 511 + 1 = 512 sectors (01FF = 511
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 31 + 1 = 32 blocks (1F = 31)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
I
DENTIFICATION
DD
DD
PP
PP
7
7
-DQ
-DQ
min. (00H = no V
max. (00H = no V
Min (Program/Erase)
Max (Program/Erase)
4
4
I
: Volts, DQ
: Volts, DQ
I
NFORMATION
NFORMATION
N
Bytes (15H = 21; 2
S
TRING
3
3
-DQ
-DQ
PP
PP
pin)
pin)
0
0
1
: 100 millivolts
: 100 millivolts
N
ms (2
N
N
21
9
µs (2
times typical (2
N
= 2 MByte)
N
times typical (2
5
times typical
= 32 ms)
3
= 8 µs)
N
µs (00H = not supported)
N
(00H = not supported)
N
ms (2
1
N
x 2
1
times typical (2
x 2
5
4
= 64 ms)
3
= 16 ms)
= 16 µs)
1
Preliminary Specifications
x 2
4
= 32 ms)
S71243-03-000
T9.1 1243
T7.1 1243
T8.1 1243
11/03