STM8AF52AATCY STMicroelectronics, STM8AF52AATCY Datasheet - Page 61
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STM8AF52AATCY
Manufacturer Part Number
STM8AF52AATCY
Description
8 BITS MICROCONTR
Manufacturer
STMicroelectronics
Series
STM8Ar
Datasheet
1.STM8AF5289TCY.pdf
(106 pages)
Specifications of STM8AF52AATCY
Core Processor
STM8A
Core Size
8-Bit
Speed
24MHz
Connectivity
CAN, I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
80-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8AF52AATCY
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM8AF52/62xx, STM8AF51/61xx
10.3.1
10.3.2
Table 26.
1. Guaranteed by design, not tested in production.
2. If V
VCAP external capacitor
Stabilization for the main regulator is achieved connecting an external capacitor C
V
to less than 15 nH.
Figure 11. External capacitor C
1. Legend: ESR is the equivalent series resistance and ESL is the equivalent inductance.
Supply current characteristics
The current consumption is measured as described in
page
If not explicitly stated, general conditions of temperature and voltage apply.
CAP
V
Symbol
kept. The EEPROM programming sequence must not be initiated.
HYS(BOR)
t
t
TEMP
V
V
VDD
58.
pin. C
DD
IT+
IT-
is below 3 V, the code execution is guaranteed above the V
EXT
Operating conditions at power-up/power-down
V
V
Reset release delay
Reset generation delay
Power-on reset
threshold
Brown-out reset
threshold
Brown-out reset
hysteresis
DD
DD
is specified in
rise time rate
fall time rate
Parameter
(2)
ESR
Table
Doc ID 14395 Rev 8
EXT
25. Care should be taken to limit the series inductance
Conditions
V
V
DD
DD
Rleak
C
—
—
—
—
—
falling
rising
Figure 8 on page 57
2.65
2.58
Min
2
2
IT-
—
—
—
(1)
(1)
and V
IT+
Electrical characteristics
thresholds. RAM content is
70
2.73
Typ
2.8
—
—
3
3
ESL
(1)
and
Max
2.95
2.88
—
—
Figure 9 on
EXT
to the
61/106
Unit
µs/V
mV
ms
µs
V