TDA6106Q NXP Semiconductors, TDA6106Q Datasheet - Page 4

• Manufacturer Part Number: TDA6106Q
• Manufacturer: NXP Semiconductors

Specifications of TDA6106Q

• Power Supply Requirement: Single
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Through Hole
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see “Handling MOS Devices” ).
QUALITY SPECIFICATION
Quality specification “SNW-FQ-611 part E” is applicable, except for ESD Human body model see Chapter “Limiting
values”, and can be found in the “Quality reference handbook” (ordering number 9397 750 00192).
THERMAL CHARACTERISTICS
Note
1. External heatsink not required.
CHARACTERISTICS
Operating range: T
Test conditions: T
measured in test circuit of Fig.5; unless otherwise specified.
1997 Mar 03
SYMBOL
R
R
SYMBOL
I
I
V
I
I
V
V
GB
BW
BW
----------- -
DD
bias
om(os)
of(max)
V
int
oc(min)
oc(max)
Video output amplifier
th j-a
th j-c
I
I
om
Tint
oc
S
L
quiescent voltage supply current
input bias current (pin 3)
internal reference voltage input stage V
offset current of black current
measurement output
temperature drift of internal
reference voltage input stage
linearity of current transfer
maximum peak output current (pin 9) V
minimum output voltage (pin 8)
maximum output voltage (pin 8)
gain bandwidth product of open-loop
gain V
small signal bandwidth
large signal bandwidth
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
amb
os
amb
/V
= 25 C; V
i, dm
= 20 to +65 C; V
PARAMETER
DD
= 200 V; V
PARAMETER
DD
= 180 to 210 V (see note 1), V
om
= 4 V; C
V
V
I
V
V
V
I
V
V
V
V
f = 500 kHz;
V
V
V
V
V
oc
oc
(1)
ocDC
ocDC
ocDC
in
om
ocDC
in
om
oc
in
in
ocDC
ocAC
ocDC
ocAC
ocDC
= 0 A;
= 10 A to 3 mA;
= 1.5 V
= 1.5 to +3.5 V;
= 1.5 to +3.5 V;
= 3.5 V
= 20 V to V
= 1.4 to 6 V
= 1.4 to 6 V
L
= 60 V (p-p);
= 100 V (p-p);
CONDITIONS
= 100 V
= 100 V
= 100 V
= 100 V
= 100 V
= 100 V
= 100 V
= 10 pF (C
4
DD
L
consists of parasitic and cathode capacitance);
30 V
om
= 1.4 to 6 V.
2.8
0
0.9
V
5
4.7
10
DD
MIN.
14
VALUE
56
12
3.0
2.5
0
0.5
1.0
25
7
V
0.52
6
5.7
DD
TYP.
Product specification
10
TDA6106Q
3.3
20
+10
1.1
12
MAX.
UNIT
K/W
K/W
mA
V
mV/K
mA
V
V
GHz
MHz
MHz
UNIT
A
A