TDA6103Q NXP Semiconductors, TDA6103Q Datasheet - Page 5

• Manufacturer Part Number: TDA6103Q
• Manufacturer: NXP Semiconductors

Specifications of TDA6103Q

• Power Supply Requirement: Single
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Through Hole
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
CHARACTERISTICS
Operating range: T
Test conditions (unless otherwise specified): T
C
March 1994
SYMBOL
I
I
I
V
C
C
C
V
V
GB
B
B
t
t
t
DD
bias
bias
pd
r
f
L
V
t
i(offset)
oc(min)
oc(max)
S
L
icm
icm
idm
Triple video output amplifier
p
= 10 pF (C
i(offset)
quiescent supply current
input bias current inverting inputs
(pins 1, 2 and 3)
input bias current non-inverting
input (pin 5)
input offset voltage
(pins 1, 2 and 3)
differential input offset voltage
temperature drift between pins 1
and 5; 2 and 5; 3 and 5
common-mode input capacitance
(pins 1, 2 and 3)
common-mode input capacitance
(pin 5)
differential mode input capacitance
between 1 and 5; 2 and 5; 3 and 5
minimum output voltage
(pins 7, 8 and 9)
maximum output voltage
(pins 7, 8 and 9)
gain-bandwidth product of
open-loop gain:
V
small signal bandwidth
(pins 7, 8 and 9)
large signal bandwidth
(pins 7, 8 and 9)
cathode output propagation delay
time 50% input to 50% output
(pins 7, 8 and 9)
difference in cathode output
propagation time 50% input to
50% output (pins 7 and 8, 7 and 9
and 8 and 9)
cathode output rise time 10%
output to 90% output
(pins 7, 8 and 9)
cathode output fall time 90% output
to 10% output (pins 7, 8 and 9)
oc1, 2, 3
L
consists of parasitic and cathode capacitance); R
j
= 20 to 150 C; V
/ V
PARAMETER
i1-5, 2-5, 3-5
DD
= 180 to 210 V; V
amb
V
V
note 1
f = 500 kHz
V
V
V
wave; f < 1 MHz;
t
and 3); see Figs 7 and 8
V
wave; f < 1 MHz;
t
and 3)
V
wave; f < 1 MHz; t
(pins 1, 2 and 3); see Fig.7
V
wave; f < 1 MHz; t
(pins 1, 2 and 3); see Fig.8
r
r
1 5
1 5
oc(p-p)
oc(p-p)
oc(p-p)
oc(p-p)
oc
o
= 25 C; V
= t
= t
= 150 to 50 V square
= 50 to 150 V square
f
f
= V
= V
= 40 ns (pins 1, 2
= 40 ns (pins 1, 2
CONDITIONS
= 60 V
= 100 V
= 100 V square
= 100 V square
2 5
2 5
5
ip
= V
= V
DD
= 1 to 4 V.
= 200 V; V
3 5
3 5
th h-a
f
r
= 1 V
= 1 V;
= 40 ns
= 40 ns
= 18 K/W; measured in test circuit Fig.5.
ip
= 1.3 V; V
7.0
V
6
5
48
48
5
15
50
10
DD
MIN.
10 V
oc1
9.25
tbf
5
10
1
5
0.75
7.5
7
38
0
60
60
1
3
DD
= V
TYP.
oc2
6
Preliminary specification
= V
11.5
+1
+1
+50
10
+10
73
73
TDA6103Q
oc3
MAX.
=
1
2
V
DD
mA
mV
mV/K
pF
pF
pF
V
V
GHz
MHz
MHz
ns
ns
ns
ns
A
A
UNIT
;