MT48LC2M32B2P-6:G Micron Technology Inc, MT48LC2M32B2P-6:G Datasheet - Page 43

IC, SDRAM, 64MBIT, 166MHZ, TSOP-86

MT48LC2M32B2P-6:G

Manufacturer Part Number
MT48LC2M32B2P-6:G
Description
IC, SDRAM, 64MBIT, 166MHZ, TSOP-86
Manufacturer
Micron Technology Inc
Type
SDRAMr
Series
-r
Datasheets

Specifications of MT48LC2M32B2P-6:G

Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
17/7.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Memory Type
DRAM - Sychronous
Access Time
5.5ns
Page Size
64Mbit
Memory Case Style
TSOP
No. Of Pins
86
Operating Temperature Range
0°C To +70°C
Frequency
166MHz
Supply Voltage
3.3V
Format - Memory
RAM
Memory Size
64M (2Mx32)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TFSOP (0.400", 10.16mm Width)
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC2M32B2P-6:G
Quantity:
106
Part Number:
MT48LC2M32B2P-6:G
Manufacturer:
MICRON
Quantity:
20 000
Table 12:
Table 13:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
Parameter
Die Revision
Operating case temperature:
Commercial
Junction temperature:
Commercial
Industrial
Ambient temperature:
Commercial
Industrial
Peak reflow temperature
G
Industrial
Temperature Limits
Thermal Impedance Simulated Values
Package
Notes:
Notes:
54-ball
VFBGA
54-pin
TSOP
1. MAX operating case temperature, T
2. Device functionality is not guaranteed if the device exceeds maximum T
3. Both temperature specifications must be satisfied.
4. The case temperature should be measured by gluing a thermocouple to the top center of
5. Operating ambient temperature surrounding the package.
1. For designs expected to last beyond the die revision listed, contact Micron Applications
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed as
3. These are estimates; actual results may vary.
Substrate
side of the device, as shown in Figure 33 and Figure 34 on page 44.
the component. This should be done with a 1mm bead of conductive epoxy, as defined by
the JEDEC EIA/JESD51 standards. Care should be taken to ensure the thermocouple bead is
touching the case.
Engineering to confirm thermal impedance values.
typical.
4-layer
2-layer
4-layer
θ JA (°C/W)
Airflow =
0m/s
70.5
80.6
64
43
θ JA (°C/W)
Airflow =
1m/s
61.2
67.7
57.1
Symbol
C
, is measured in the center of the package on the top
T
PEAK
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
T
A
C
J
θ JA (°C/W)
Airflow =
2m/s
Min
57.2
61.5
53.5
-40
-40
-40
0
0
0
64Mb: x4, x8, x16 SDRAM
Electrical Specifications
Max
260
80
90
85
95
70
85
θ JB (°C/W)
©2000 Micron Technology, Inc. All rights reserved.
54.6
46.1
45.7
Units
C
°C
°C
°C
°C
during operation.
θ JC (°C/W)
13.7
1, 2, 3, 4
4.9
Notes
3, 5
3

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