MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 7

no-image

MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
SAMSUNG
Quantity:
1 001
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON
Quantity:
11 200
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON21
Quantity:
1 684
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT41J256M8HX-15E:D
Quantity:
5 845
Part Number:
MT41J256M8HX-15E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 51: Differential Output Slew Rate Definition ......................................................................................... 73
Table 52: DDR3-1066 Speed Bins ................................................................................................................... 74
Table 53: DDR3-1333 Speed Bins ................................................................................................................... 75
Table 54: DDR3-1600 Speed Bins ................................................................................................................... 76
Table 55: DDR3-1866 Speed Bins ................................................................................................................... 77
Table 56: Electrical Characteristics and AC Operating Conditions ................................................................... 78
Table 57: Electrical Characteristics and AC Operating Conditions for Speed Extensions ................................... 87
Table 58: Command and Address Setup and Hold Values Referenced at 1 V/ns – AC/DC-Based ....................... 97
Table 59: Derating Values for
Table 60: Derating Values for
Table 61: Derating Values for
Table 62: Derating Values for
Table 63: Minimum Required Time
Table 64: Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based .................................. 105
Table 65: Derating Values for
Table 66: Derating Values for
Table 67: Derating Values for
Table 68: Required Time
Table 69: Truth Table – Command ................................................................................................................ 112
Table 70: Truth Table – CKE ......................................................................................................................... 114
Table 71: READ Command Summary ............................................................................................................ 116
Table 72: WRITE Command Summary .......................................................................................................... 116
Table 73: READ Electrical Characteristics, DLL Disable Mode ........................................................................ 122
Table 74: Write Leveling Matrix ..................................................................................................................... 126
Table 75: Burst Order ................................................................................................................................... 135
Table 76: MPR Functional Description of MR3 Bits ........................................................................................ 145
Table 77: MPR Readouts and Burst Order Bit Mapping .................................................................................. 146
Table 78: Self Refresh Temperature and Auto Self Refresh Description ........................................................... 178
Table 79: Self Refresh Mode Summary .......................................................................................................... 178
Table 80: Command to Power-Down Entry Parameters ................................................................................. 179
Table 81: Power-Down Modes ...................................................................................................................... 180
Table 82: Truth Table – ODT (Nominal) ........................................................................................................ 190
Table 83: ODT Parameter ............................................................................................................................. 190
Table 84: Dynamic ODT Specific Parameters ................................................................................................. 191
Table 85: Mode Registers for R
Table 86: Mode Registers for R
Table 87: Timing Diagrams for Dynamic ODT ............................................................................................... 192
Table 88: Synchronous ODT Parameters ....................................................................................................... 197
Table 89: Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 202
Table 90: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period .................................. 204
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
t
VAC Above V
t
t
t
t
t
t
t
IS/
IS/
IS/
IS/
DS/
DS/
DS/
TT,nom
TT(WR)
t
t
t
t
IH – AC175/DC100-Based ........................................................................... 98
IH – AC150/DC100-Based ........................................................................... 98
IH – AC135/DC100-Based ........................................................................... 99
IH – AC125/DC100-Based ........................................................................... 99
t
t
t
DH – AC175/DC100-Based ....................................................................... 106
DH – AC150/DC100-Based ....................................................................... 106
DH – AC135/DC100-Based ....................................................................... 107
t
VAC Above V
............................................................................................................. 192
............................................................................................................. 192
IH(AC)
(Below V
IH(AC)
IL(AC)
for Valid Transition ................................................... 100
7
) for Valid Transition ............................................. 107
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x4, x8, x16 DDR3 SDRAM
© 2006 Micron Technology, Inc. All rights reserved.

Related parts for MT41J256M8HX-15E:D