IS45S16100C1-7TA1 ISSI, Integrated Silicon Solution Inc, IS45S16100C1-7TA1 Datasheet - Page 27

• Manufacturer Part Number: IS45S16100C1-7TA1
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS45S16100C1-7TA1

• Organization: 1Mx16
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 50
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Not Compliant

IS45S16100C1
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
01/03/06
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in the
precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (t
precharge operation starts one clock period after the last
burst data input.
CAS latency = 2, burstlength = 4
CAS latency = 3, burstlength = 4
COMMAND
COMMAND
CLK
CLK
DQ
DQ
DAL
WRITE WITH AUTO-PRECHARGE
WRITE WITH AUTO-PRECHARGE
) is t
RP
WRITE A0
WRITE A0
D
D
plus one CLK period. That is, the
IN
IN
(BANK 0)
(BANK 0)
0
0
D
D
IN
IN
1
1
DAL
) between the
D
D
IN
IN
2
2
D
D
IN
IN
1-800-379-4774
3
3
Therefore, the selected bank can be made active after a
delay of t
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
CAS
CAS
CAS
CAS
CAS Latency
PRECHARGE START
PRECHARGE START
DAL
t
DAL
t
t
DAL
.
RP
t
t
DAL
ACT 0
RP
1CLK
+t
3
RP
ISSI
1CLK
+t
ACT 0
2
RP
27
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