K4H511638C-UCB3 Samsung Semiconductor, K4H511638C-UCB3 Datasheet - Page 23

• Manufacturer Part Number: K4H511638C-UCB3
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H511638C-UCB3

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 185mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

DDR SDRAM 512Mb C-die (x4, x8, x16)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
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Pulldown Characteristics for Weak Output Driver
Pullup Characteristics for Weak Output Driver
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Rev. 1.2 January 2007
Vout(V)
Vout(V)
DDR SDRAM
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Typical Low
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Typical High
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