K4H511638C-UCB3 Samsung Semiconductor, K4H511638C-UCB3 Datasheet - Page 7

• Manufacturer Part Number: K4H511638C-UCB3
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H511638C-UCB3

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 185mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

DDR SDRAM 512Mb C-die (x4, x8, x16)
DDR SDRAM
6.0 Block Diagram
(32Mb x 4 / 16Mb x 8 / 8Mb x 16 I/O x4 Banks)
LWE
x4/8/16
CK, CK
Data Input Register
LDM (x4x8)
LUDM (x16)
Serial to parallel
Bank Select
x8/16/32
16Mx8/ 8Mx16/ 4Mx32
16Mx8/ 8Mx16/ 4Mx32
x8/16/32
x4/8/16
x4/8/16
16Mx8/ 8Mx16/ 4Mx32
DQi
CK, CK
16Mx8/ 8Mx16/ 4Mx32
ADD
Column Decoder
Latency & Burst Length
Data Strobe
Programming Register
LCKE
LDM (x4x8)
LRAS LCBR
LWE
LUDM (x16)
LCAS
LWCBR
CK, CK
DM Input Register
Timing Register
LDM (x4x8)
CK, CK
CKE
CS
RAS
CAS
WE
LUDM (x16)
Rev. 1.2 January 2007