MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 37

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 13: I
Table 14: I
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
DD2N
DD2NT
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
and I
Measurement Loop
12–15
16–19
20–23
24–27
28–31
12–15
16–19
20–23
24–27
28–31
8–11
8–11
Notes:
Notes:
4–7
4–7
0
1
2
3
0
1
2
3
DD3N
Measurement Loop
1. DQ, DQS, DQS# are midlevel.
2. DM is LOW.
3. All banks closed during I
1. DQ, DQS, DQS# are midlevel.
2. DM is LOW.
3. All banks closed.
Electrical Specifications – I
D#
D#
D#
D#
D
D
D
D
1
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
Repeat sub-loop 0, use BA[2:0] = 1; ODT = 0
Repeat sub-loop 0, use BA[2:0] = 2; ODT = 1
Repeat sub-loop 0, use BA[2:0] = 3; ODT = 1
Repeat sub-loop 0, use BA[2:0] = 4; ODT = 0
Repeat sub-loop 0, use BA[2:0] = 5; ODT = 0
Repeat sub-loop 0, use BA[2:0] = 6; ODT = 1
Repeat sub-loop 0, use BA[2:0] = 7; ODT = 1
DD2N
0
0
1
1
0
0
1
1
Repeat sub-loop 0, use BA[2:0] = 1
Repeat sub-loop 0, use BA[2:0] = 2
Repeat sub-loop 0, use BA[2:0] = 3
Repeat sub-loop 0, use BA[2:0] = 4
Repeat sub-loop 0, use BA[2:0] = 5
Repeat sub-loop 0, use BA[2:0] = 6
Repeat sub-loop 0, use BA[2:0] = 7
37
, all banks open during I
0
0
1
1
0
0
1
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0
0
0
0
0
0
0
0
DD
0
0
0
0
0
0
0
0
Specifications and Conditions
0
0
0
0
0
0
0
0
DD3N
0
0
0
0
0
0
0
0
.
0
0
0
0
0
0
0
0
© 2006 Micron Technology, Inc. All rights reserved.
0
0
0
0
F
F
F
F
0
0
0
0
0
0
0
0
Definitions
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–
–
–
–
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