MT47H64M16HR-3 Micron Technology Inc, MT47H64M16HR-3 Datasheet - Page 43

• Manufacturer Part Number: MT47H64M16HR-3
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M16HR-3

• Lead Free Status / RoHS Status: Compliant

ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to Vss
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Parameter
Rtt effective impedance value for 75Ω setting
EMR (A6, A2) = 0, 1
Rtt effective impedance value for 150Ω setting
EMR (A6, A2) = 1, 0
Rtt effective impedance value for 50Ω setting
EMR (A6, A2) = 1, 1
Deviation of VM with respect to VddQ/2
Notes:
1. Rtt1(eff) and Rtt2(eff) are determined by separately applying Vih(AC) and Vil(DC) to the
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
ball being tested, and then measuring current, I(Vih[AC]), and I(Vil[AC]), respectively.
between –40°C and 0°C (T
43
C
).
Symbol
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
ΔVM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
ODT DC Electrical Characteristics
1Gb: x4, x8, x16 DDR2 SDRAM
Min
120
60
40
–6
Nom
150
75
50
–
© 2004 Micron Technology, Inc. All rights reserved.
Max
180
90
60
6
Units
%
Ω
Ω
Ω
Notes
1, 2
1, 2
1, 2
3