MT29F2G08ABBEAHC:E Micron Technology Inc, MT29F2G08ABBEAHC:E Datasheet - Page 104

• Manufacturer Part Number: MT29F2G08ABBEAHC:E
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABBEAHC:E

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Electrical Specifications
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Notes:
Stresses greater than those listed can cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
guaranteed. Exposure to absolute maximum rating conditions for extended periods can
affect reliability.
Table 19: Absolute Maximum Ratings
Voltage on any pin relative to V
Table 20: Recommended Operating Conditions
Table 21: Valid Blocks
Parameter/Condition
Voltage input
Vcc supply voltage
Storage temperature
Short circuit output current, I/Os
Parameter/Condition
Operating temperature Commercial
Vcc supply voltage
Ground supply voltage
Parameter
Valid block
number
1. Invalid blocks are blocks that contain one or more bad bits. The device may contain bad
2. Block 00h (the first block) is guaranteed to be valid with ECC when shipped from the
blocks upon shipment. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below NVB during the endurance life of the
device. Do not erase or program blocks marked invalid by the factory.
factory.
Symbol
NVB
1.8V
3.3V
1.8V
3.3V
Industrial
1.8V
3.3V
104
MT29F2G
SS
Device
Symbol
T
V
V
STG
Symbol
–
CC
IN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
V
V
T
CC
2Gb: x8, x16 NAND Flash Memory
SS
A
2008
Min
Min
–40
1.7
2.7
Min
–0.6
–0.6
–0.6
–0.6
0
0
–65
–
Electrical Specifications
Max
2048
Typ
1.8
3.3
–
–
0
© 2009 Micron Technology, Inc. All rights reserved.
Max
150
2.4
4.6
2.4
4.6
5
Blocks
Unit
Max
1.95
3.6
70
85
0
Notes
Unit
Unit
mA
1, 2
°C
°C
°C
V
V
V
V
V
V
V