RC28F640J3F75A NUMONYX, RC28F640J3F75A Datasheet - Page 28

• Manufacturer Part Number: RC28F640J3F75A
• Manufacturer: NUMONYX

Specifications of RC28F640J3F75A

• Lead Free Status / RoHS Status: Not Compliant

7.2
Table 13: Configuration Performance
7.3
Figure 12: AC Waveform for Reset Operation
Note:
Datasheet
28
W200
W250
W501
W650
W651
W600
W601
W602
W652
W702
Notes:
1.
2.
3.
4.
5.
6.
7.
#
STS is shown in its default mode (RY/BY#).
Typical values measured at T
change based on device characterization.
These performance numbers are valid for all speed versions.
Sampled but not 100% tested.
Excludes system-level overhead.
These values are valid when the buffer is full, and the start address is aligned.
Max values are measured at worst case temperature, data pattern and V
W600 and W601, the Max value are expressed at +25 °C or -40 °C.
W602 is the typical time between an initial block erase or erase resume command and then a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
t
Symbol
t
ERS/SUSP
t
t
t
PROG/W
t
t
ERS/AB
SUSP/P
SUSP/E
BC/MB
t
PROG
t
t
STS
lks
lkc
Program, Erase, Block-Lock Specifications
Reset Specifications
Program Time
Buffer Program Time
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Program Suspend Latency Time to Read
Erase Suspend Latency Time to Read
Erase to Suspend
STS Pulse Width Low Time
blank check
STS (R)
RP# (P)
Vcc
A
= +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
Numonyx
Single word
Aligned 16 Words BP Time (32Byte)
Aligned 256 Words BP Time (512Byte)
Array Block
Parameter
P3
P1
P1
®
Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
P2
CC
corner within 100K cycles. But for W650, W651,
Typ
128
720
500
500
0.5
1.0
3.2
40
50
15
15
3600
Max
175
654
4.0
60
20
20
—
—
—
1
Unit
sec
sec
ms
µs
µs
µs
µs
µs
µs
µs
ns
March 2010
208032-02
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3,4,6
1,2,3,4,6
1,2,3,4,6
1,2,3,4,6
1,2,3,6
1,2,3,6
Notes
1,7
—
1